Effect of Pressure on the Electrical Resistance of Individual Boron-Doped Carbon Nanotubes
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概要
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The electrical resistance of an individual boron-doped multi-walled carbon nanotube was measured under high pressure up to 1.73 GPa. The resistance decreased drastically when pressure was applied. The temperature dependence of the resistance was explained by a variable range hopping transport model, and the dimensionality was observed to change from one to three dimensions with increasing pressure.
- 2012-10-25
著者
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Takano Yoshihiko
National Inst. For Materials Sci. Ibaraki Jpn
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Yamaguchi Takahide
National Institute For Materials Science
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Tsuda Shunsuke
National Institute for Materials and Science, Tsukuba, Ibaraki 305-0047, Japan
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WATANABE Tohru
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Ishii Satoshi
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Tomioka Fumiaki
National Institute for Materials and Science, Tsukuba, Ibaraki 305-0047, Japan
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Yamaguchi Takahide
National Institute for Materials and Science, Tsukuba, Ibaraki 305-0047, Japan
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Watanabe Tohru
National Institute for Materials and Science, Tsukuba, Ibaraki 305-0047, Japan
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Takano Yoshihiko
National Institute for Materials and Science, Tsukuba, Ibaraki 305-0047, Japan
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Ishii Satoshi
National Institute for Materials and Science, Tsukuba, Ibaraki 305-0047, Japan
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