Preparation of Thin Crystals of FeTe<sub>1-x</sub>S<sub>x</sub> Using the Scotch-Tape Method
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概要
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We have investigated an applicability of the scotch-tape method to fabricating thin crystals of Fe chalcogenide FeTe<sub>1-x</sub>S<sub>x</sub>. Thin crystals with a typical thickness of 40 nm were expectedly left on a Si substrate. Thin films prepared using this process will develop both detailed studies on intrinsic nature of Fe-based superconductivity and application to superconducting devices.
- 2011-08-25
著者
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Takano Yoshihiko
National Inst. For Materials Sci. Ibaraki Jpn
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Mizuguchi Yoshikazu
Department of Electrical and Electronic Engineering, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
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OKAZAKI Hiroyuki
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Yamaguchi Takahide
National Institute for Materials and Science, Tsukuba, Ibaraki 305-0047, Japan
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Watanabe Tohru
National Institute for Materials and Science, Tsukuba, Ibaraki 305-0047, Japan
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Miura Osuke
Department of Electrical and Electronic Engineering, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
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