Switching Current Measurements of Self-Assembled Ferroelectric PbTiO3 Nanoislands Using Scanning Probe Microscopy
スポンサーリンク
概要
- 論文の詳細を見る
We report on switching current measurements of self-assembled PbTiO3 nanoislands with an average height in the range of 4--5 nm and a width of less than 100 nm by scanning probe microscopy (SPM). A blunt SPM tip with a flat end-face with a plateau diameter of 1.8 μm was directly contacted to PbTiO3 nanoislands as a top electrode, which enabled electrical characterization of as-prepared samples without the need for fabricating top electrodes or any preprocessing. Using this SPM system, it was revealed that the nanoislands have switching charge densities as large as 140--170 μC/cm2, comparable to those of epitaxial thin films.
- 2012-02-25
著者
-
Fujisawa Hironori
Graduate School Of Engineering University Of Hyogo
-
Shimizu Masaru
Graduate School Of Engineering University Of Hyogo
-
Nakashima Seiji
Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2201, Japan
-
Shimizu Masaru
Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2201, Japan
-
Yamada Kosei
Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2201, Japan
-
Fujisawa Hironori
Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2201, Japan
関連論文
- MOCVD法により形成したPbTiO_3自己集合島の構造制御(新型不揮発性メモリー)
- 強誘電体ナノワイヤ及びナノアイランドの自発分極に関する研究 (平成21年度研究報告)
- ナノ強誘電体の基礎物性 : 現状と将来展望
- MOCVD法によるPbTiO_3ナノ島作製とその強誘電性
- 24pYE-6 圧電応答顕微鏡でみる分域像(強誘電体分域の測定法の新展開と新しい分域像,シンポジウム,領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- MOCVD法によるナノサイズ強誘電体の作製とその物性
- 19aXC-4 HAADF STEM法を用いたSrTiO_3(100)/PbTiO_3強誘電体薄膜の原子構造組成解析(X線・粒子線(電子線),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
- MOCVD法による強誘電体ナノ構造の形成とその物性(新型不揮発性メモリ)
- 29pXH-2 自己組織化による強誘電体PbTiO_3ナノ構造の形成と構造制御(領域10シンポジウム : ナノスケール構造を利用した物質創製-材料種の枠を超えて)(領域10)
- 圧電応答顕微鏡による強誘電体薄膜の観察と評価
- 21pXC-7 圧電応答顕微鏡による強誘電体薄膜の分極反転過程の観察と評価
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- Multiferroism at Room Temperature in BiFeO_3/BiCrO_3(111) Artificial Superlattices
- Epitaxial Yttria-stabilized Zirconia (YSZ) Film Deposited on Si(100) Substrate by YAG Laser
- Bi_2Sr_2Ca_1Cu_2O_X Thin Film Deposition by Q-switched YAG Laser
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111)
- Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg_Nb_)O_3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition
- Epitaxial Growth of β-FeSi_2 on Single Crystal Insulator
- Preparation of BiFe0.9Co0.1O3 Films by Pulsed Laser Deposition under Magnetic Field
- Ferroelectric and Piezoelectric Properties of Polycrystalline BiFeO3 Thin Films Prepared by Pulsed Laser Deposition under Magnetic Field
- Size Dependence of Ferroelectric Polarization in PbTiO3 Nanoislands
- Switching Current Measurements of Self-Assembled Ferroelectric PbTiO3 Nanoislands Using Scanning Probe Microscopy