Fabrication of Epitaxial Silicon Thin Films for Solar Cells by Low-Temperature Reactive Thermal Chemical Vapor Deposition Technique
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概要
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Low temperature reactive thermal chemical vapor deposition (RT-CVD) with a mixture of SiH4 and F2 gases has been developed to obtain silicon films with a relatively thick epitaxial layer for solar cell applications. It was found that an epitaxial layer with good crystallinity and a “$2{\times}1$ structure” can be grown at approximately 400 °C up to a thickness of 3.0 μm and that the epitaxial growth shows a sudden breakdown at 3.2 μm to result in an amorphous phase. The growth mechanism, which determines the crystallinity for thicker layers, is discussed on the basis of hydrogen content and lattice distortion.
- 2010-05-25
著者
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Kondo Michio
Department Of Chemistry Faculty Of Science And Ehgineering Saga University
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Akihisa Minowa
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Minowa Akihisa
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Michio Kondo
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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