Optimization of Deposition Process and Microscopic Characterization of Highly Oriented Aluminum Nitride Thin Films for Bimorph Structures of Piezoelectric Tunable Capacitors

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概要

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• Film deposition with RF sputtering to control residual stress in aluminum nitride (AlN) thin films has been investigated to fabricate the bimorph actuator for a piezoelectric tunable capacitor with low-voltage operation. The effects of conditions in sputtering and surface cleaning were studied both to obtain a preferable film orientation for piezoelectric actuation and to suppress structural deformation of the cantilever due to the residual stress in films. Microscopic analysis revealed that (0001)-oriented AlN and (111)-oriented Al films were epitaxially grown at each interface in the bimorph structure. The current–voltage ($I$–$V$) measurements showed a leakage current of less than $5 \times 10^{-5}$ A m-2 in 500-nm thick AlN films up to 30 V. The effect of optimization of process parameters was demonstrated by the capacitance–voltage ($C$–$V$) characteristics of the folded-beam tunable capacitor, in which the suppression of residual stress in piezoelectric layers was shown to be effective to obtain low-voltage operation.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-02-25

著者

• Kawakubo Takashi

  Toshiba Res. Consulting Corp. Kawasaki Jpn

• Itaya Kazuhiko

  Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

• Itaya Kazuhiko

  Electron Devices Laboratory, Toshiba Corporation, 1 Komukai-Toshiba-cho, Kawasaki 212-8582, Japan

• Nagano Toshihiko

  Electron Devices Laboratory, Toshiba Corporation, 1 Komukai-Toshiba-cho, Kawasaki 212-8582, Japan

• Nishigaki Michihiko

  Electron Devices Laboratory, Toshiba Corporation, 1 Komukai-Toshiba-cho, Kawasaki 212-8582, Japan

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• Anomalous Substrate Current in Metal–Oxide–Semiconductor Field-Effect Transistors with Large Channel Width
• Primary Factor Extracted for Anomalous Decline of Drain Current in Metal--Oxide--Semiconductor Field-Effect Transistors
• Optimization of Deposition Process and Microscopic Characterization of Highly Oriented Aluminum Nitride Thin Films for Bimorph Structures of Piezoelectric Tunable Capacitors

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