Primary Factor Extracted for Anomalous Decline of Drain Current in Metal--Oxide--Semiconductor Field-Effect Transistors
スポンサーリンク
概要
- 論文の詳細を見る
A statistical approach has been exploratively applied to extract an influential factor of anomalous decreases in drain current observed in metal--oxide--semiconductor field-effect transistors with large channel widths. Since negative slopes were detected in drain current vs drain voltage (I_{\text{d}}--V_{\text{ds}}) curves even with negligible heat quantity or density, the self-heating effect was excluded as the primary factor. In contrast, the aspect ratio of the device areas showed a significant influence. These results support the validity of a hypothesis, namely, that acoustic standing waves are excited and thereby the probabilities of impact ionizations are synchronously magnified in the devices.
- 2012-05-25
著者
-
Itaya Kazuhiko
Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
Itaya Kazuhiko
Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, Kawasaki 212-8582, Japan
-
Abe Kazuhide
Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
Sasaki Tadahiro
Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
Abe Kazuhide
Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, Kawasaki 212-8582, Japan
関連論文
- Anomalous Substrate Current in Metal–Oxide–Semiconductor Field-Effect Transistors with Large Channel Width
- Primary Factor Extracted for Anomalous Decline of Drain Current in Metal--Oxide--Semiconductor Field-Effect Transistors
- Optimization of Deposition Process and Microscopic Characterization of Highly Oriented Aluminum Nitride Thin Films for Bimorph Structures of Piezoelectric Tunable Capacitors
- Sharp Resonance in a Metal--Oxide--Semiconductor Field-Effect Transistor with Multifinger Gate Configuration
- Steep Increase in Substrate Current in Metal--Oxide--Semiconductor Field-Effect Transistor with Multiple-Gate Configuration
- Steep Increase in Substrate Current in Metal--Oxide--Semiconductor Field-Effect Transistor with Multiple-Gate Configuration