Steep Increase in Substrate Current in Metal--Oxide--Semiconductor Field-Effect Transistor with Multiple-Gate Configuration

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概要

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• A steep increase in substrate current has been observed in a metal--oxide--semiconductor field-effect transistor with a multiple-gate configuration. Regarding gate voltage dependence, the substrate current plotted on a logarithmic scale exhibited a sharp rise with a slope of 6 mV/decade, which is 20 times steeper than that simultaneously measured for the drain current. Since the slope is even 10 times steeper than the ideal subthreshold swing of 60 mV/decade, the upsurge has been discussed using a hypothetical model in which the impact ionization rate is increased by excitation of acoustic standing waves within the device.

• 2013-11-25

著者

• Abe Kazuhide

  Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

• Abe Kazuhide

  Electron Devices Laboratory, Corporate Research and Development Center, Toshiba Corporation, Kawasaki 212-8582, Japan

関連論文

• Anomalous Substrate Current in Metal–Oxide–Semiconductor Field-Effect Transistors with Large Channel Width
• Primary Factor Extracted for Anomalous Decline of Drain Current in Metal--Oxide--Semiconductor Field-Effect Transistors
• Sharp Resonance in a Metal--Oxide--Semiconductor Field-Effect Transistor with Multifinger Gate Configuration
• Steep Increase in Substrate Current in Metal--Oxide--Semiconductor Field-Effect Transistor with Multiple-Gate Configuration
• Steep Increase in Substrate Current in Metal--Oxide--Semiconductor Field-Effect Transistor with Multiple-Gate Configuration

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