Sharp Resonance in a Metal--Oxide--Semiconductor Field-Effect Transistor with Multifinger Gate Configuration

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概要

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• A sharp resonance has been observed at 300 MHz in the frequency dependence of the impedance measured for the backgate terminal of a metal--oxide--semiconductor field-effect transistor with a multifinger gate configuration under a certain bias condition. The quality factor was estimated to be over 1500 at the resonance, where the real part of impedance became negative. The results suggest that impact ionization periodically upsurges with a constant frequency. The sharpness of the frequency dependence has been discussed in terms of the feasible excitation of acoustic standing waves synchronized with impact ionization.

• 2013-07-25

著者

• Abe Kazuhide

  Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

関連論文

• Anomalous Substrate Current in Metal–Oxide–Semiconductor Field-Effect Transistors with Large Channel Width
• Primary Factor Extracted for Anomalous Decline of Drain Current in Metal--Oxide--Semiconductor Field-Effect Transistors
• Sharp Resonance in a Metal--Oxide--Semiconductor Field-Effect Transistor with Multifinger Gate Configuration
• Steep Increase in Substrate Current in Metal--Oxide--Semiconductor Field-Effect Transistor with Multiple-Gate Configuration
• Steep Increase in Substrate Current in Metal--Oxide--Semiconductor Field-Effect Transistor with Multiple-Gate Configuration

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