Itaya Kazuhiko | Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
スポンサーリンク
概要
- Itaya Kazuhikoの詳細を見る
- 同名の論文著者
- Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japanの論文著者
関連著者
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Itaya Kazuhiko
Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Abe Kazuhide
Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sasaki Tadahiro
Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Kawakubo Takashi
Toshiba Res. Consulting Corp. Kawasaki Jpn
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Itaya Kazuhiko
Electron Devices Laboratory, Toshiba Corporation, 1 Komukai-Toshiba-cho, Kawasaki 212-8582, Japan
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Itaya Kazuhiko
Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Nagano Toshihiko
Electron Devices Laboratory, Toshiba Corporation, 1 Komukai-Toshiba-cho, Kawasaki 212-8582, Japan
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Nishigaki Michihiko
Electron Devices Laboratory, Toshiba Corporation, 1 Komukai-Toshiba-cho, Kawasaki 212-8582, Japan
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Abe Kazuhide
Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Abe Kazuhide
Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, Kawasaki 212-8582, Japan
著作論文
- Anomalous Substrate Current in Metal–Oxide–Semiconductor Field-Effect Transistors with Large Channel Width
- Primary Factor Extracted for Anomalous Decline of Drain Current in Metal--Oxide--Semiconductor Field-Effect Transistors
- Optimization of Deposition Process and Microscopic Characterization of Highly Oriented Aluminum Nitride Thin Films for Bimorph Structures of Piezoelectric Tunable Capacitors