Mechanical Bending Cycles of Hydrogenated Amorphous Silicon Layer on Plastic Substrate by Plasma-Enhanced Chemical Vapor Deposition for Use in Flexible Displays

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概要

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• Atomic force microscopy (AFM) measurements and micro-Raman spectra show that the long-range hydrogenated amorphous silicon (a-Si:H) bond structure on a plastic substrate is deformed and distorted after being subjected to bending cycles, whereas the short-range a-Si:H bond structure remains the same. The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage, subthreshold swing, and mobility of carriers. From AFM and micro-Raman spectroscopy, we are able to understand the morphology of an a-Si:H layer under mechanical strain, which is the fundamental reliability issue for the development of flexible electronics.

• 2009-02-25

著者

• Chang Shu-tong

  Department Of Electrical Engineering National Taiwan University

• Tang Ming

  Department Of Physiology Medical College Of Qingdao University

• LIN Chung-Yi

  Department of Life Sciences, National Cheng Kung University

• Lin Chung-Yi

  Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan

• Lee Min-Hung

  Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 116, Taiwan

• Wu Yi-Chun

  Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan

• Chang Shu-Tong

  Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan

• Tang Ming

  Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan

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