Current Enhancement of Green Transistors Compared with Conventional Tunnel Field-Effect Transistors

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概要

• 論文の詳細を見る

• P-type tunneling-based high-driving-current green field-effect transistors (p-gFETs) with dopant segregation (DS) on bulk Si were successfully fabricated and developed. gFETs with the vertical band-to-band tunneling (BTBT) mechanism have a valid benefit for {\sim}25\times ON current enhancement compared with tunneling field-effect transistors (TFETs) without sacrificing leakage current and subthreshold swing for CMOS scaling in future-generation transistors. Ni DS enhanced the amount of n⁺dopant in the source/drain region and produced a steep junction profile, which improved the BTBT mechanism. The promising gFET with silicon-on-insulator-free (SOI-free) gFET can be compatible with current processes and solve the issues of cost and thermal dissipation.

• 2013-04-25

著者

• Lee Min-Hung

  Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 116, Taiwan

• Kao Cheng-Ying

  Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 116, Taiwan

• Lin Jhe-Cyun

  Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 116, Taiwan

• Chen Chih-Wei

  Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan

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• Current Enhancement of Green Transistors Compared with Conventional Tunnel Field-Effect Transistors

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