High-Bandwidth Si-Based Metal Oxide Semiconductor/Silicon-on-Insulator Photodetectors for Optical Communications
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-06-10
著者
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CHANG Shu-Tong
Department of Electrical Engineering, National Taiwan University
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Chang Shu-tong
Department Of Electrical Engineering National Taiwan University
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Chang Shu-tong
Department Of Electronic Engineering Chung Yuan Christian University
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Liang Chi-yuan
Graduate Institute Of Electro-optical Engineering National Taiwan University
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HSU Buo-Chin
Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Tai
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Hsu Buo-chin
Department Of Electrical Engineering And Graduate Institute Of Electronics Engineering National Taiw
関連論文
- Room-Temperature Electroluminescence from Metal-Oxide-Silicon-Tunneling Diodes on (110) Substrates
- Electron Transport Model for Strained Silicon-Carbon Alloy
- High-Bandwidth Si-Based Metal Oxide Semiconductor/Silicon-on-Insulator Photodetectors for Optical Communications
- Mechanical Bending Cycles of Hydrogenated Amorphous Silicon Layer on Plastic Substrate by Plasma-Enhanced Chemical Vapor Deposition for Use in Flexible Displays
- Impact of Source/Drain Si1-yCy Stressors on Silicon-on-Insulator N-type Metal–Oxide–Semiconductor Field-Effect Transistors
- Electron and Hole Mobilities in Orthorhombically Strained Silicon
- Electron Transport Model for Strained Silicon-Carbon Alloy
- High-Bandwidth Si-Based Metal Oxide Semiconductor/Silicon-on-Insulator Photodetectors for Optical Communications