Electron and Hole Mobilities in Orthorhombically Strained Silicon
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概要
- 論文の詳細を見る
Carrier transport in orthorhombically strained Si is theoretically analyzed. Calculations are based on a $16\times 16$ Hamiltonian matrix constructed from the linear combination of atomic orbital approximation with spin–orbit interaction and strain effect taken into account. In the case of electrons, there is a little difference between orthorhombic and biaxial strains. The phonon-limited hole mobility is about 1200 cm2/(V s) under orthorhombic strain at a Ge content of 30%. A strong hole mobility enhancement relative to unstrained bulk Si is found, ranging from a factor of two at a Ge content of 20% up to a factor of about three at a Ge content of 40%. The enhanced material properties make orthorhombically strained Si attractive for novel device applications, although the improvements are not as large as for biaxial tensile strain.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Chang Shu-tong
Department Of Electrical Engineering National Taiwan University
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Chang Shu-Tong
Department of Electrical Engineering, National Chung Hsing University, Tai-Chung 402, Taiwan, R.O.C.
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