Electron Transport Model for Strained Silicon-Carbon Alloy

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概要

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• Electron mobility in strained Si1-xCx layers grown on a Si substrate is calculated as functions of carbon content, alloy scattering potential, and doping concentration at 300 K. Alloy scattering potential affects low-field mobility significantly. For a low alloy scattering potential (${<}0.6$ eV), the strain effect is fully beneficial for in-plane transport in undoped Si1-xCx. For a high alloy scattering potential (${>}1$ eV), the effects of alloy scattering override the strain-induced reduction in effective mass in undoped strained Si1-xCx. The electron transport model is validated by experimental data. In the doped strained Si1-xCx, both results from our model and experiments on electron transport indicate that the effects of alloy and impurity scattering prevail over the expected gain due to strain.

• 2005-04-15

著者

• Chang Shu-tong

  Department Of Electrical Engineering National Taiwan University

• LIN Chung-Yi

  Department of Life Sciences, National Cheng Kung University

• Lin Chung-Yi

  Department of Physics, National Chung Hsing University, Taipei, Taiwan, R.O.C.

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