Growth and Characterization of Nanocolumnar-Structure Boron Indium Nitride Alloys Deposited on Sapphire Substrates by Solution Chemical Vapor Deposition

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概要

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• The growth and characteristics of boron indium nitride (BInN) alloys deposited on sapphire substrates by solution chemical vapor deposition were studied. These BInN alloys exhibit a mirror like surface morphology and a flat interface without inclusions. An X-ray diffraction peak observed at a $2\theta$ angle of 38.71° is associated with the (111) orientation of B0.5In0.5N. An emission peak appears in the photoluminescence (PL) spectrum of BInN alloy at temperatures between 20 and 120 K. This peak is at 323 nm (3.839 eV) in the 20 K PL spectrum and shifts to 325 nm (3.82 eV) as temperature approaches 120 K.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-10-25

著者

• Chen Lung-chien

  Department Of Electro-optical Engineering National Taipei University Of Technology

• Chen Lung-Chien

  Department of Electro-Optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, R.O.C.

• Tien Ching-Ho

  Department of Electro-Optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, R.O.C.

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