Enhanced Performance of Dye-Sensitized Solar Cells with Nanostructure InN Compact Layer
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概要
- 論文の詳細を見る
This study presents a dye-sensitized solar cells (DSSCs) with a nanostructured InN compact layer (InN-CPL). The effect of a nanostructured InN-CPL in a DSSC structure prepared by radio frequency magnetron sputtering was examined. The InN-CPL effectively reduces the back reaction at the interface between the indium tin oxide (ITO) transparent conductive film and the electrolyte in the DSSC. DSSCs fabricated on ITO/InN-CPL/TiO<inf>2</inf>/D719 exhibited a short-circuit current density (J_{\text{SC}}), open-circuit voltage (V_{\text{OC}}), and power conversion efficiency (\eta) of 23.2 mA/cm<sup>2</sup>, 0.7 V, and 8.9%, respectively.
- 2013-05-25
著者
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Chen Lung-chien
Department Of Electro-optical Engineering National Taipei University Of Technology
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Chen Cheng-Chiang
Department of Electro-optical Engineering, National Taipei University of Technology, Taipei 106, Taiwan
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Kuo Shu-Jung
Department of Electro-optical Engineering, National Taipei University of Technology, Taipei 106, Taiwan
関連論文
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- Growth and Characterization of Nanocolumnar-Structure Boron Indium Nitride Alloys Deposited on Sapphire Substrates by Solution Chemical Vapor Deposition
- Annealing Characteristics of Zn-Doped InN films on Sapphire Substrates by Reactive Magnetron Sputtering
- Enhanced Performance of Dye-Sensitized Solar Cells with Nanostructure InN Compact Layer