Optoelectronic Properties of the p-MnZnO/n-Si Structure Photodiodes in a Strong Magnetic Field

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概要

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• Photodiodes with a p-MnZnO/n-Si substrate structure were fabricated. Mn-doped p-type ZnO (MnZnO) films were deposited by ultrasonic spray pyrolysis on a (100)-oriented silicon substrate. A dark current and a photocurrent of ${\sim}4.31\times 10^{-7}$ and $6.95\times 10^{-4}$ A, respectively, were measured at a reverse bias of 2 V, and a photocurrent-to-dark current contrast ratio of almost four orders of magnitude was observed. When a p-MnZnO/n-Si structure photodiode was applied a strong magnetic field of 0.5 T, the photocurrent slightly increases to ${\sim}1.24\times 10^{-3}$ A at a reverse bias of 2 V. This may be attributed to the Auger recombination effect due to the applied magnetic field.

• 2010-06-25

著者

• Chen Lung-chien

  Department Of Electro-optical Engineering National Taipei University Of Technology

• Ya-Ying Hsu

  Department of Electro-Optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, R.O.C

• Lung-Chien Chen

  Department of Electro-Optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, R.O.C

• Tien Ching-Ho

  Department of Electro-Optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, R.O.C.

• Hsu Ya-Ying

  Department of Electro-Optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, R.O.C

• Ching-Ho Tien

  Department of Electro-Optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, R.O.C

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