Metal–Semiconductor–Metal AlN Mid-Ultraviolet Photodetectors Grown by Magnetron Reactive Sputtering Deposition

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概要

• 論文の詳細を見る

• Metal–semiconductor–metal (MSM) AlN mid-ultraviolet (mid-UV) photodetectors were fabricated. AlN layers were grown on GaN substrates by magnetron reactive sputtering deposition. The AlN photodetectors exhibited a high responsivity at wavelengths from 210 nm to 190 nm, and the response tails off at a wavelength of 220 nm. The responsivities at 200 nm at biases of 5 V and 10 V were 1.08 and 3.51 A/W, respectively. When the reverse voltage was higher than 7 V, responsivity increased almost linearly with reverse voltage. The responsivity at 25 V was calculated to be approximately 14.9 A/W.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-06-15

著者

• Fu Ming-song

  Department Of Electro-optical Engineering National Taipei University Of Technology

• Chen Lung-chien

  Department Of Electro-optical Engineering National Taipei University Of Technology

• Chen Lung-Chien

  Department of Electro-Optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, Republic of China

• Huang In-Lin

  Department of Electro-Optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, Republic of China

関連論文

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• Metal–Semiconductor–Metal AlN Mid-Ultraviolet Photodetectors Grown by Magnetron Reactive Sputtering Deposition
• Growth and Characterization of Nanocolumnar-Structure Boron Indium Nitride Alloys Deposited on Sapphire Substrates by Solution Chemical Vapor Deposition
• Annealing Characteristics of Zn-Doped InN films on Sapphire Substrates by Reactive Magnetron Sputtering
• Enhanced Performance of Dye-Sensitized Solar Cells with Nanostructure InN Compact Layer

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