Annealing Characteristics of Zn-Doped InN films on Sapphire Substrates by Reactive Magnetron Sputtering
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概要
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Zinc-doped indium nitride (InN:Zn) films were deposited on (0001) sapphire substrates by radio-frequency reactive magnetron sputtering. All as-deposited InN:Zn film samples exhibit n-type conductivity, with a measured carrier concentration of at least $5.6\times 10^{20}$ cm-3. Rapid thermal annealing (RTA) at 500°C for 20 min, was used to deposit the sample at a sputtering power of 100 W, and transformed the n-type InN film into a p-type In2O3. The compensated carrier concentration and the Hall mobility at sputtering power of 50 W were $1.28\times 10^{17}$ cm-3 and 1.24 cm2/V$\cdot$s, respectively. Two emission peaks in 20 K photoluminescence (PL) spectrum of the p-type In2O3 films were identified to correspond to the near band-to-band and conduction band-to-acceptor recombination.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-05-15
著者
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Chen Lung-chien
Department Of Electro-optical Engineering National Taipei University Of Technology
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Chen Lung-Chien
Department of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, Republic of China
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Chen Hung-Chang
Department of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, Republic of China
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