Analysis of Pad Surface Roughness on Copper Chemical Mechanical Planarization
スポンサーリンク
概要
- 論文の詳細を見る
For Cu high removal rate (RR) chemical mechanical planarization (CMP), the effect of pad surface roughness on Cu RR was investigated. Because surface roughness measured by the stylus profiler and the laser microscope (optical) profiler includes various topographies, it is difficult to conclude which effective roughness parameter affects Cu RR. Accordingly, the measured surface roughness was classified into two types of roughness scales. One is the topography by pores, and the other one is the micro roughness caused by conditioner. These were divided by a wavelength of surface profile. In this result, a stylus profile could not precisely trace two types of roughness scales. On the other hand, an optical magnification of 400 could trace the change in topography by micropores. And an optical magnification of 1000 could trace the change in micro roughness caused by conditioning. In the evaluation of Cu RR and the classified roughness, micro roughness measured by the optical magnification of 1000 was strongly correlated with Cu RR. It is concluded that Cu RR is affected by micro roughness caused by conditioner, and also its roughness is necessary to be measured by an optical profiler at high magnification.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
-
Matsumura Yoshiyuki
Department Of Surgery Hakodate Central General Hospital
-
Hirao Takashi
Department Of Chemistry Faculty Of Science And Technology Keio University
-
Kinoshita Masaharu
Nitta-Hass Inc., Kyotanabe, Kyoto 610-0333, Japan
-
Kinoshita Masaharu
Nitta Haas Inc., Kan-nabidai, Kyotanabe, Kyoto 610-0333, Japan
-
Hirao Takashi
Department of Electronic and Photonic Systems Engineering, Kochi University of Technology, Tosayamada, Kochi 782-8502, Japan
-
Matsumura Yoshiyuki
Department of Electronic and Photonic Systems Engineering, Kochi University of Technology, Tosayamada, Kochi 782-8502, Japan
関連論文
- Formation of Vertically Aligned Carbon Nanotubes by Dual-RF-Plasma Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Development of New Apparatus for Field Emission Measurement
- Formation of Graphite Layers during Carbon Nanotubes Growth
- Synthesis of Aligned Carbon Nanofibers at 200℃
- A Case of Lung Cancer with Hypercalcemia which was Incidentally Complicated with Primary Hyperparathyroidism due to Parathyroid Adenoma
- Discussion on Modulation Methods for Flyback-type Single-Phase Inverters with Enhanced Power Decoupling for Photovoltaic AC Module Systems
- Pad Surface Treatment to Control Performance of Chemical Mechanical Planarization
- Low-Temperature Synthesis of Aligned Carbon Nanofibers on Glass Substrates by Inductively Coupled Plasma Chemical Vapor Deposition
- IR Sensing of the Electronic Structure in the Mixed-Valence States of Iron Carbonyl-Attached Biferrocene and Terferrocene
- Evaluation of Mercaptobenzothiazole Anticorrosive Layer on Cu Surface by Spectroscopic Ellipsometry
- Correlation between Field Electron Emission and Structural Properties in Randomly and Vertically Oriented Carbon Nanotube Films
- Method for Aligned Bamboolike Carbon Nanotube Growth Using RF Magnetron Sputtering
- Fabrication and Characteristics of Amorphous Carbon Films Grown in Pure Methane Plasma by using Radio Frequency Plasma Enhanced Chemical Vapor Deposition
- Ultra-Low-Threshold Field Electron Emission from Pillar Array of Aligned Carbon Nanotube Bundles
- Direct Synthesis of Carbon Nanotubes on Ti-Coated Metal Substrates and Its Application to Electrochemical Double Layer Capacitors
- Low Temperature Synthesis of Aligned Carbon Nanotubes by Inductively Coupled Plasma Chemical Vapor Deposition Using Pure Methane
- Evaluation of Cu Ion Concentration Effects on Cu Etching Rate in Chemical-Mechanical Polishing Slurry
- Analysis of Pad Surface Roughness on Copper Chemical Mechanical Planarization
- Formation of Graphite Layers during Carbon Nanotubes Growth