Comparisons of the Hot Carrier Effect in Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Reversed Silicon Wafer Direct Bonding

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概要

• 論文の詳細を見る

• The hot carrier effect in quasi-silicon-on-insulator (SOI) and conventional SOI power metal–oxide–semiconductor field-effect transistors (MOSFETs) was compared on the basis of experimental results. Device degradation caused by the hot carrier effect in the quasi-SOI power MOSFETs proved to be smaller than in the conventional SOI power MOSFETs because the former can suppress the activation of parasitic bipolar transistors.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-12-25

著者

• Matsumoto Satoshi

  NTT Energy and Environment Systems Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

関連論文

• Design Considerations for Linear Amplification and Low-Insertion Loss Thin-Film Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors
• Experimental Investigation of Pattern Layout Effect on Radio-Frequency Performance of Thin-Film Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors
• Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors
• Comparisons of the Hot Carrier Effect in Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Reversed Silicon Wafer Direct Bonding

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