Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors
スポンサーリンク
概要
- 論文の詳細を見る
The radio-frequency performance of quasi-silicon-on-insulator (SOI) and conventional SOI power metal–oxide–semiconductor field-effect-transistors (MOSFETs) was compared based on experimental results and numerical simulations. The performance of the quasi-SOI power MOSFETs proved to be superior to that of the conventional SOI power MOSFETs because the former can suppress the activation of the parasitic bipolar transistors. We clarified, through a numerical simulation, that the parasitic bipolar effect causes harmonics generation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-12-15
著者
-
Hiraoka Yasushi
NTT Energy and Environment Systems Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Matsumoto Satoshi
NTT Energy and Environment Systems Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
関連論文
- Design Considerations for Linear Amplification and Low-Insertion Loss Thin-Film Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors
- Experimental Investigation of Pattern Layout Effect on Radio-Frequency Performance of Thin-Film Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors
- Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors
- Comparisons of the Hot Carrier Effect in Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Reversed Silicon Wafer Direct Bonding