Matsumoto Satoshi | NTT Energy and Environment Systems Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
スポンサーリンク
概要
- Matsumoto Satoshiの詳細を見る
- 同名の論文著者
- NTT Energy and Environment Systems Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japanの論文著者
関連著者
-
Matsumoto Satoshi
NTT Energy and Environment Systems Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Hiraoka Yasushi
NTT Energy and Environment Systems Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Hiraoka Yasushi
NTT Energy and Environment Systems Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 43-0198, Japan
-
Matsumoto Satoshi
NTT Energy and Environment Systems Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 43-0198, Japan
-
Mino Masato
NTT Energy and Environment Systems Laboratories, Atsugi, Kanagawa 243-0198, Japan
-
Matsumoto Satoshi
NTT Energy and Environment Systems Laboratories, Atsugi, Kanagawa 243-0198, Japan
著作論文
- Design Considerations for Linear Amplification and Low-Insertion Loss Thin-Film Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors
- Experimental Investigation of Pattern Layout Effect on Radio-Frequency Performance of Thin-Film Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors
- Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors
- Comparisons of the Hot Carrier Effect in Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Reversed Silicon Wafer Direct Bonding