Organic Light-Emitting Devices with In-Doped (4 at. %) ZnO Thin Films as the Anodic Electrode

概要

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We have investigated transparent conducting properties of using In-doped (4 at. %) zinc oxide (IZO) thin films deposited on glass substrate by pulsed DC magnetron sputtering at low processing substrate temperatures. As increase of the substrate temperature, IZO thin films with better $c$-axis orientations were grown in perpendicular to the substrate and work functions of IZO films slightly decrease. The optical properties showed high transmittance of higher than 85% in the UV–visible region and exhibited the absorption edge of about 350 nm. The electrical properties exhibited the low resistivity of $1.1 \times 10^{-3}$ $\Omega$ cm and the high mobility of ${\sim}7.8$ cm2 V-1 s-1. The organic light emitting diodes (OLEDs) with an IZO anode achieved a maximum luminance efficiency of 2.7 cd/A and external quantum efficiency of 0.47%, which are compared to the values of a control device fabricated on commercial ITO anode. These results indicate that IZO films hold promise for anodic electrodes in the OLEDs application.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-01-25