Ultralow-Energy Boron-Ion Implantation of Silicon

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An ultralow-energy ion implantation of a (001) silicon surface was carried out using a mass-separated 11B+ ion beam; the ions had an energy of either 30 or 200 eV. The effect of implantation conditions on electrical properties was investigated. The sheet resistance after boron implantation at an energy of 200 eV decreased with an increase in target temperature because fewer defects, such as interstitials and vacancies, were introduced. The sheet resistance after implantation at an energy of 30 eV saturated at a value of 6 k$\Omega$/$\square$ at an ion dose of more than $0.5\times 10^{16}$ ions/cm2. The activation ratios of the dopant after implantation at $0.51\times 10^{16}$ and $1.03\times 10^{16}$ ions/cm2 were 61 and 46%, respectively, because at the higher dose, boron ions were introduced into the interstitial sites of silicon. The implantation depth of boron was 1.2 nm. These results show that ultrashallow ion doping can be achieved with ultralow-energy ion beams at 30 eV.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-01-25