Selective Etching of Silicon Nitride Film on Single Crystalline Silicon Solar Cell Using Intensive Surface Discharge
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概要
- 論文の詳細を見る
A new etching technique, which is useful for the formation of electrode grooves for finger and busber electrodes on solar cells, was examined using a surface discharge at atmospheric pressure. A silicon nitride film was etched along boundary lines between discharge electrodes covered with a dielectric layer and the film. It was found that intensive surface streamers play an essential role in the etching of the film and that a high etching rate more than 150 nm/min could be obtained.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-05-15
著者
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MATSUKUMA Kunihiro
Department of Electrical System and Computer Engineering, Sojo University
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Hamada Toshiyuki
Department Of Cardiovascular Surgery Kanagawa Cardiovascular And Respiratory Center
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Sakoda Tatsuya
Department Of Electrical And Electronic Engineering Faculty Of Engineering University Of Miyazaki
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Hamada Toshiyuki
Department of Software Science, Sojo University, 4-22-1 Ikeda, Kumamoto 860-0082, Japan
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Nagasawa Kazuo
M. SETEK Co., Ltd., Daiwa Bldg., 3-6-16 Yanaka, Taito-ku, Tokyo 110-0001, Japan
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Herai Hiroki
M. SETEK Co., Ltd., Daiwa Bldg., 3-6-16 Yanaka, Taito-ku, Tokyo 110-0001, Japan
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Matsui Kazuo
M. SETEK Co., Ltd., Daiwa Bldg., 3-6-16 Yanaka, Taito-ku, Tokyo 110-0001, Japan
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