Effects of Oxygen Vacancies on Relaxation Behavior of Mg-Doped BaTiO3

概要

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The effects of oxygen vacancy on the dielectric properties of Mg-doped BaTiO3 were studied as a function of frequency in the temperature range of 150–450 °C. In Ba(Ti1-xMgx)O3-x, the Curie point ($T_{\text{c}}$) shifted to lower temperatures as the Mg content ($x$) was increased. Dielectric loss ($\tan\delta$) peaks moved to higher frequencies with increasing Mg content ($x$) in the Ba(Ti1-xMgx)O3-x system ($0.0005\leq x\leq 0.01$) at 250 °C, whose peaks appeared at 0.5–6.9 kHz for $x=0.0005--0.01$. Loss ($\tan\delta$) peaks also moved to higher frequencies with increasing temperature regardless of Mg content ($x$). The activation energy was estimated to be 0.46–0.53 eV at 150–300 °C and 1.08–1.12 eV at 350–450 °C. The activation energy at higher temperatures could be due to the extra energy required for the dissociation of the dipolar complex (Mg$''_{\text{Ti}}$–V$_{\text{O}}^{\bullet\bullet}$) in addition to the dipolar motion of oxygen vacancies.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-10-15