Effect of Substrate Orientation on Arsenic Precipitation in Low-Temperature-Grown GaAs

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概要

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• Arsenic precipitation in "superlattice" structures of alternately undoped and $[\text{Si}]=3 \times 10^{18}$ cm-3-doped GaAs grown at 250°C on (100), (311)A, and (311)B GaAs substrates has been studied using transmission electron microscopy. It is found that upon postgrowth annealing at 800°C, As precipitates are nearly confined in the Si-doped regions, forming two-dimensional cluster arrays located approximately at the center of each Si-doped layer. The results also show that the As precipitates in the (311)B substrate are slightly denser and larger than those in the (311)A substrate and both are markedly denser and larger than those in the (100) substrate. This can be attributed to the varying excess arsenic incorporations in differently orientated substrates.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-09-15

著者

• CHEN Y.

  Department of Chemical and Materials Engineering, National Central University

• Lee W.

  Department Of Electrical Engineering National Cheng Kung University

• KUO C.

  Department of Electronics Engineering, National Chiao-Tung University

• Huang J.

  Department Of Materials And Optoelectronic Science Center For Nanoscience And Nanotechnology Nationa

• Kuo C.

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Guo X.

  Institute of Physics, Academia Sinica, Taipei 11529, Taiwan

• CHEN Y.

  Department of Applied Analysis, State University of New York

• Lee W.

  Department of Chemical Engineering, Sogang University

• Huang J.

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan

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