Minimum Size of Oxygen Precipitates in Czochralski Silicon Wafers Detected by Improved Light Scattering Tomography
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概要
- 論文の詳細を見る
The minimum size of oxygen precipitates within Czochralski-grown (CZ) Si wafers detectable by light scattering tomography (LST) is completely dependent upon the correctness of the intensity measurement of scattered light, because the intensity is exactly proportional to the size of the precipitates. To assure precise intensity measurement, an adequately adjusted intensity and a well-shaped focusing of the laser beam were realized by instrument enhancement for illumination, and analytical software for brightness correction of and noise elimination from the light scattering tomograms were installed in a computer. With this well-developed system, the minimum diameters of oxygen precipitates in CZ Si wafers detected by improved LST was quantitatively determined using 1.06 μm radiation from a Nd:YAG laser to be 10 nm, compared with oxygen precipitates which were directly measured by transmission electron microscopy (TEM).
- 2005-08-15
著者
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Irisawa Toshiharu
Computer Center Gakushuin University
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Ogawa Tomoya
Laboratory Of Cellular Biochemistry Animal Resource Science/veterinary Medical Science The Universit
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Nango Nobuhito
Ratoc System Engineering Co. Ltd
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Irisawa Toshiharu
Computer Center, Gakushuin University, Mejiro, Toshima-ku, Tokyo 171-8599, Japan
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Nango Nobuhito
Ratoc System Engineering, 540 Waseda-tsurumakicho, Shinjuku-ku, Tokyo 162-0041, Japan
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Ogawa Tomoya
Laboratory for Physics and Technology of Crystals, 2-9-21-604 Shin-sayama, Sayama, Saitama 350-1331, Japan
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