Fabrication Technique for Preparing Nanogap Electrodes by Conventional Silicon Processes
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概要
- 論文の詳細を見る
A fabrication technique for preparing nanogap electrodes, such as a gold (Au) nano electrode, using conventional silicon (Si) processes—photolithography, etching, thermal oxidation and deposition—is proposed. Stencil substrates are prepared using the Si processes. Then, without requiring complicated technology, nanogap structures can be formed using the technique. Numerous kinds of materials can be selected as an electrode. The mass production of a sensing device for the detection of deoxyribonucleic acid (DNA), or a so-called DNA chip, can be realized at a low cost.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-06-15
著者
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Tanino Katsumi
Toyama Industrial Technology Center
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Fujiki Satoshi
Toyama Industrial Technology Center
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KADOSAKI Masahiro
Toyama Industrial Technology Center
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Obata Tsutomu
Toyama Industrial Technology Center, 150 Futagami, Takaoka, Toyama 933-0981, Japan
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Hashioka Shingi
Toyama New Industry Organization, 527 Takada, Toyama 930-0866, Japan
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Tsuritani Hiroyuki
Toyama Industrial Technology Center, 150 Futagami, Takaoka, Toyama 933-0981, Japan
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Kadosaki Masahiro
Toyama Industrial Technology Center, 150 Futagami, Takaoka, Toyama 933-0981, Japan
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