Fabrication of Integrated Chip with Microinductors and Micro-Tunable Capacitors by Complementary Metal–Oxide–Semiconductor Postprocess

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概要

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• In this study, we investigate the fabrication of integrated chips with microinductors and a micro-tunable capacitor using the standard 0.35 μm single polysilicon four-metal (SPFM) complementary metal–oxide–semiconductor (CMOS) and a postprocess. Two inductors-planar spiral and conical spiral-are fabricated and tested. The postprocess has two main steps: One step is the removal of a metal from sacrificial layers and the etching holes in structures using phosphoric acid. The other is the etching of a silicon substrate using tetramethyl ammonium hydroxide (TMAH) to increase the distance between the inductors and the silicon substrate, thereby reducing substrate loss and increasing the quality ($Q$) factor of the inductors. Experimental results show that the maximum $Q$ factors of the conical spiral and planar spiral inductors were 4.6 at 3.5 GHz and 4.7 at 4 GHz, respectively, following the postprocess. The self-resonance frequency of the conical spiral inductor exceeded that of the planar spiral inductor.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• Dai Ching-liang

  Department Of Mechanical Engineering Oriental Institute Of Technology

• Tsai Chih-hao

  Department Of Communication Engineering National Chiao Tung University

• Dai Ching-Liang

  Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.

• Tsai Chih-Hao

  Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.

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• Novel Method for In Situ Monitoring of Thickness of Quartz during Wet Etching
• Fabrication of Integrated Chip with Microinductors and Micro-Tunable Capacitors by Complementary Metal–Oxide–Semiconductor Postprocess

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