Fabrication of a Micromachined Tunable Capacitor Using the Complementary Metal–Oxide–Semiconductor Post-Process of Etching Metal Layers
スポンサーリンク
概要
- 論文の詳細を見る
In this study, we investigate the fabrication of a micromechanical tunable capacitor using the commercial complementary metal–oxide–semiconductor (CMOS) process and the post-process of maskless wet etching metal layers. The post-process has merits of easy execution and low cost. The post-process uses two etchants to etch the metal layers to release the suspended structures of the tunable capacitor. The comb-drive actuator is employed to change the position of the movable plate in the parallel capacitor, such that the overlap area between the two plates in the parallel capacitor is changed. The experimental results show a capacitance of 3.5 pF and a tuning range of $3.5:1$ at 20 V.
- 2006-02-15
著者
-
Liu Mao-chen
Department Of Mechanical Engineering National Chung Hsing University
-
Dai Ching-liang
Department Of Mechanical Engineering Oriental Institute Of Technology
-
Wei Mao-Kuo
Institute of Materials Science and Engineering, National Dong Hwa University, Shoufeng, 974 Taiwan, R.O.C.
-
Chang Ming-Wei
Center for Aerospace and System Technology, Industrial Technology Research Institute, Hsinchu, 310 Taiwan, R.O.C.
-
Hsu Heng-Ming
Department of Electrical Engineering, National Chung Hsing University, Taichung, 402 Taiwan, R.O.C.
-
Liu Mao-Chen
Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402 Taiwan, R.O.C.
-
Dai Ching-Liang
Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402 Taiwan, R.O.C.
関連論文
- Complementary Metal-Oxide-Semiconductor Microelectromechanical Pressure Sensor Integrated with Circuits on Chip
- Microstructural Fabrication for Measuring Residual Strains of CMOS Thin Films
- Complementary Metal–Oxide–Semiconductor Microelectromechanical Pressure Sensor Integrated with Circuits on Chip
- Fabrication of a Micromachined Tunable Capacitor Using the Complementary Metal–Oxide–Semiconductor Post-Process of Etching Metal Layers
- A Micromachined Microwave Switch Fabricated by the Complementary Metal Oxide Semiconductor Post-Process of Etching Silicon Dioxide
- Novel Method for In Situ Monitoring of Thickness of Quartz during Wet Etching
- Fabrication of Integrated Chip with Microinductors and Micro-Tunable Capacitors by Complementary Metal–Oxide–Semiconductor Postprocess