A Micromachined Microwave Switch Fabricated by the Complementary Metal Oxide Semiconductor Post-Process of Etching Silicon Dioxide

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概要

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• In this study, we investigate the fabrication of a micromachined microwave switch using the commercial 0.35 μm double polysilicon four metal (DPFM) complementary metal oxide semiconductor (CMOS) process and the post-process of only one maskless wet etching. The post-process has merits of easy execution and low cost. The post-process uses an etchant (silox vapox III) to etch the silicon dioxide layer to release the suspended structures of the microwave switch. The microwave switch is a capacitive type that is actuated by an electrostatic force. The components of the microwave switch are coplanar waveguide (CPW) transmission lines, a suspended membrane and supported springs. Experimental results show that the driving voltage of the switch is about 17 V. The switch has an insertion loss of $-2.5$ dB at 50 GHz and an isolation of $-15$ dB at 50 GHz.

• 2005-09-15

著者

• Liu Mao-chen

  Department Of Mechanical Engineering National Chung Hsing University

• Dai Ching-liang

  Department Of Mechanical Engineering Oriental Institute Of Technology

• Hsu Heng-Ming

  Department of Electrical Engineering, National Chung Hsing University, Taichung, 402 Taiwan, R.O.C.

• Dai Ching-Liang

  Department of Mechanical Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.

• Peng Hsuan-Jung

  Department of Mechanical Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.

• Wu Chyan-Chyi

  Center for Measurement Standards, Industrial Technology Research Institute, Hsinchu, Taiwan 300, R.O.C.

• Yang Lung-Jieh

  Department of Mechnical and Electro-Mechanical Engineering, Tamkang University, Tamsui, Taiwan 251, R.O.C.

関連論文

• Complementary Metal-Oxide-Semiconductor Microelectromechanical Pressure Sensor Integrated with Circuits on Chip
• Microstructural Fabrication for Measuring Residual Strains of CMOS Thin Films
• Complementary Metal–Oxide–Semiconductor Microelectromechanical Pressure Sensor Integrated with Circuits on Chip
• Fabrication of a Micromachined Tunable Capacitor Using the Complementary Metal–Oxide–Semiconductor Post-Process of Etching Metal Layers
• A Micromachined Microwave Switch Fabricated by the Complementary Metal Oxide Semiconductor Post-Process of Etching Silicon Dioxide
• Novel Method for In Situ Monitoring of Thickness of Quartz during Wet Etching
• Fabrication of Integrated Chip with Microinductors and Micro-Tunable Capacitors by Complementary Metal–Oxide–Semiconductor Postprocess

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