Materials Design for Cu Gettering by Electronic Dopants in Silicon
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概要
- 論文の詳細を見る
In the silicon device process, there is a strong demand for eliminating copper contamination. Gettering of Cu by dopant atoms is a useful method for this purpose. In this paper, the gettering of Cu is theoretically studied. We have assessed the efficiency of gettering through the evaluation of the binding energies between Cu and electronic dopants and the dissociation energies. The calculated dissociation energies well describe the efficiency of various dopants, which have been found experimentally. It is shown that B and Al are the most efficient gettering centers among single dopants. The present study provides the basis for further study of the gettering mechanism and for the design of efficient gettering centers.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-11-15
著者
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MICHIKITA Toshiyuki
Department of Condensed Matter Physics, The Institute of Scientific and Industrial Research (ISIR),
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SHIRAI Koun
Department of Computational Nanomaterials Design, Nanoscience and Nanotechnology Center, ISIR, Osaka
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Katayama-Yoshida Hiroshi
Department of Computational Nanomaterials Design, Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Katayama-Yoshida Hiroshi
Department of Condensed Matter Physics, The Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Michikita Toshiyuki
Department of Condensed Matter Physics, ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Michikita Toshiyuki
Department of Condensed Matter Physics, The Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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