Scanning Tunneling Microscopy Barrier Height Imaging of Subsurface Dopant Atoms on Hydrogen-Terminated Si(111)
スポンサーリンク
概要
- 論文の詳細を見る
Dopant atoms beneath a hydrogen-terminated Si(111) $1\times 1$ surface are investigated by scanning tunneling microscopy (STM) and barrier height (BH) imaging. Because of the weak screening effect of the hydrogen-terminated Si(111) surface, subsurface donors and acceptors can be imaged by STM. From BH images, we can deduce a local change in BH at subsurface dopant sites. Both the sign and magnitude of the observed BH change are in good agreement with calculations assuming a screened Coulomb potential for a dopant potential.
- 2004-07-15
著者
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Kobayashi Kengo
Department Of Internal Medicine Asahi Rosai Hospital
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Kurokawa Shu
International Innovation Center Kyoto University
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Sakai Akira
International Innovation Center Kyoto University
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Kurokawa Shu
International Innovation Center, Kyoto University, Kyoto 606-8501, Japan
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Kobayashi Kengo
Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
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Sakai Akira
International Innovation Center, Kyoto University, Kyoto 606-8501, Japan
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