Conductance of Al Nanocontacts under High Biases

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概要

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• The bias dependence of the conductance in Al nanocontacts has been measured at room temperature in ultrahigh vacuum. The conductance histogram of Al nanocontacts shows a well-defined first peak near $0.9G_{0}$ ($G_{0}=2e^{2}/h$ is the conductance quantum unit), which corresponds to single-atom contacts of Al. With increasing the bias, this first peak decreases in height and disappears at 800 mV, while its position remains unshifted. The observed disappearance voltage at which the first peak of Al is less than half of that of the $1G_{0}$ peak of Au. Our results suggest that under high biases, the formation of Al single-atom contacts become less favorable than that of Au single-atom contacts.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-07-15

著者

• Kurokawa Shu

  International Innovation Center Kyoto University

• Sakai Akira

  International Innovation Center Kyoto University

• Fujii Akihiro

  Department of Materials Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan

• Mizobata Jun-ichi

  Department of Materials Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan

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