Fine Pattern Etching of Silicon Substrates Using Atmospheric Line-Shaped Microplasma Source
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概要
- 論文の詳細を見る
An atmospheric line-shaped microplasma source was developed for fine pattern etching, and the dependence of the etching properties on the substrate temperature and the distance between the two outer gas outlets was investigated. There was a sudden increase of the etching rate and a decrease of top width when the substrate temperature was 300°C or more. Auger electron spectroscopy (AES) analysis indicates that oxidation on the line shoulder caused the top width to decrease. By decreasing the distance between the two outer gas outlets from 3 mm to 650 μm, the top width decreased from 441 μm to 234 μm. The gas flow simulation result revealed that there exists a firing limit of SF6 partial pressure from 0.1% to 0.2% in the configuration.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-06-15
著者
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Saitoh Mitsuo
Production Core Engineering Laboratory Matsushita Electric (panasonic)
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Okumura Tomohiro
Production Core Engineering Laboratory Matsushita Electric (panasonic)
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Saitoh Mitsuo
Production Core Engineering Laboratory, Matsushita Electric Industrial, Co., Ltd., 2-7 Matsuba-cho, Kadoma, Osaka 571-8502, Japan
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Matsuda Izuru
Production Core Engineering Laboratory, Matsushita Electric Industrial, Co., Ltd., 2-7 Matsuba-cho, Kadoma, Osaka 571-8502, Japan
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Okumura Tomohiro
Production Core Engineering Laboratory, Matsushita Electric Industrial, Co., Ltd., 2-7 Matsuba-cho, Kadoma, Osaka 571-8502, Japan
関連論文
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- Fine Pattern Etching of Silicon Substrates Using Atmospheric Line-Shaped Microplasma Source
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