Comparison of Superconducting Transition Characteristics of Two Iridium/Gold Bilayer Transition Edge Sensor Devices
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概要
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We are developing a high-energy-resolution X-ray microcalorimeter for X-ray fluorescent spectrometry using a superconducting transition edge sensor (TES) that consists of a bilayer of iridium and gold (Ir/Au). In this paper, we have studied the superconducting transition characteristics of two different bilayer structures. Type 1 is a simple stacked bilayer where a square-pattern film of iridium is covered with an identical pattern of gold. Type 2 is based on the Type 1 Ir/Au film, however, it has Au side banks. The resistance-temperature characteristics of these films are investigated by a four-wired resistance measurement method. As a result, the transition curve of Type 2 obeyed the Ginzburg–Landau (GL) theory; however, the transition curve of Type 1 was entirely different from that of Type 2. The reason there was a difference in these transition curves of the two devices is discussed in terms of the difference in the electric current distribution inside TESs. Even if we assume a uniform bilayer film and a uniform proximity effect over the entire film, the current density inside the device affects the characteristics of the transition curves.
- 2004-05-15
著者
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Ohno Masashi
Department Of Chemistry Faculty Of Science Shinshu University
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Nakazawa Masaharu
Department Of Electrical Engineering University Of Tokyo:(present Address) Nuclear Engineering Resea
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Inou Tadashi
Department Of Quantum Engineering And Systems Science School Of Engineering The University Of Tokyo
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Ataka Manabu
Institue Of Industrial Science The University Of Tokyo
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Kunieda Yuichi
Department Of Quantum Engineering And Systems Science School Of Engineering The University Of Tokyo
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Fukuda Daiji
Department Of Quantum Engineering And Systems Science Graduate School Of Engineering The University
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Takahashi Hiroyuki
Research And Development Center Toshiba Corporation
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Inou Tadashi
Department of Quantum Engineering and Systems Science, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Ohno Masashi
Department of Quantum Engineering and Systems Science, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Fukuda Daiji
Department of Quantum Engineering and Systems Science, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Kunieda Yuichi
Department of Quantum Engineering and Systems Science, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Nakazawa Masaharu
Department of Quantum Engineering and Systems Science, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Takahashi Hiroyuki
Research into Artifacts, Center for Engineering, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
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