Application of Genetic Algorithms to Charge Loss Correction in CdZnTe Semiconductor Detectors
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概要
- 論文の詳細を見る
A new software correction method for charge loss in compound semiconductor detectors is proposed. The application of genetic algorithm (GA) for improving the pulse height spectrum is presented. The system provides correction factors to minimize spectral distortion due to the incomplete charge collection inside the detector. Typical spectra were recorded by irradiating the detector from the negative electrode with ^137<C>s and ^57<C>o gamma-ray sources. The quality of these spectra in terms of FWHM, peak-to-valley ratio, and photopeak efficiency is by far better than that of the conventional spectrum. We have shown that the treatment of complicated events such as multiple scattering can greatly improve the energy characteristics of this type of detector especially for high-energy gamma rays. The results indicated the advantages of GA for correction of charge trapping in compound semiconductor detectors. [DOI: 10.1143/JJAP.41.908]
- 社団法人応用物理学会の論文
- 2002-02-15
著者
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TAKAHASHI Hiroyuki
Research into Artifacts, Center for Engineering, The University of Tokyo
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HASEGAWA Shuichi
Department of Quantum Engineering and System Science, University of Tokyo
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Shaaban Noha
Department Of Quantum Engineering And Systems Science The University Of Tokyo
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Suzuki A
Department Of Quantum Engineering And Systems Science The University Of Tokyo
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Suzuki Atsuyuki
Department Of Computer Science Faculty Of Engineering Shizuoka University
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Hasegawa S
Department Of Quantum Engineering And Systems Science The University Of Tokyo
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Takahashi Hiroyuki
Research Center For Advanced Science And Technology. The University Of Tokyo
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Takahashi Hiroyuki
Research And Development Center Toshiba Corporation
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