InGaAs/AlGaAs Quantum Well Laterally-Coupled Distributed Feedback Laser
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概要
- 論文の詳細を見る
InGaAs/AlGaAs quantum well laterally-coupled distributed feedback (LC-DFB) laser is designed and fabricated by electron beam lithography and reactive ion etching. The LC-DFB laser eliminates the need of a crystal regrowth in a conventional DFB laser fabrication process. A single mode lasing at a wavelength of 967.8 nm with a side mode suppression ratio of 46 dB was achieved under CW operation at room temperature. The threshold current and maximum peak output power were 15 mA and 19 mW at 90 mA injection, respectively.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-05-15
著者
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Das Prodip
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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UEMUKAI Masahiro
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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Suhara Toshiaki
Department Of Elect Ronics Graduate School Of Engineering Osaka University
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Das Prodip
Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871, Japan
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Uemukai Masahiro
Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Uemukai Masahiro
Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871, Japan
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Suhara Toshiaki
Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871, Japan
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