Synthesis and Thermal Conductivity Measurement of High-Integrity Ultrathin Oxygen-Implanted Buried Oxide Layers
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概要
- 論文の詳細を見る
Ultrathin buried oxide (BOX) layers have been synthesized by low-dose and low-energy separation by implantation of oxygen (SIMOX) technique. The formed BOX layers were examined by transmission electron microscopy (TEM) and the results demonstrated that the BOX layers are of high integrity without any detectable silicon islands therein. A modified method was introduced to measure the thermal conductivity of the synthesized high-integrity BOX layers with different thicknesses. It is found that ultrathin SIMOX BOX layers exhibit a thermal conductivity of ${\sim}0.92$ Wm-1K-1, which is approximately 34% lower than that of bulk SiO2, 1.4 Wm-1K-1. In addition, the boundary thermal resistance of the Si/BOX interfaces was also measured.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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He Ping
Institute Of Microelectronics Tsinghua University
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CHEN Jing
Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy o
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CHEN Meng
Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy o
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WANG Xi
Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy o
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Tian Lilin
Institute Of Microelectronics Tsinghua University
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Liu Litian
Institute Of Microelectronics Tsinghua University
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Li Zhijian
Institute Of Microelectronics Tsinghua University
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Dong Yemin
Ion Beam Laboratory Shanghai Institute Of Microsystem And Information Technology Chinese Academy Of
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He Ping
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
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Wang Xi
Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
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Chen Meng
Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
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Chen Jing
Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
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Liu Litian
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
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Tian Lilin
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
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Li Zhijian
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
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Dong Yemin
Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
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