Characteristics of Fatigue Induced by Distribution of Defect Charges in SrBi2Ta2O9 Capacitors
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概要
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Pt/SrBi2Ta2O9 (SBT)/Pt capacitors have been successfully fabricated using a metalorganic decomposition (MOD) technique. The switchable polarization of SBT capacitors showed a tendency to increase with the number of switching cycles at first and then decrease after $2\times 10^{9}$ switching cycles. During the switching process, a competition existed between the depinning behavior of domains and the aggregation of defect charges at the interfaces between SBT thin films and electrodes. It was this competition that determined the fatigue characterization for SBT capacitors. Higher external voltages facilitated the recovery of polarization suppression, which suggests that more domains in the SBT thin films were easily depinned by a higher external field and the pinning depth due to defect charges was different.
- 2006-12-15
著者
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Liu Litian
Institute Of Microelectronics Tsinghua University
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Ren Tianling
Institute Of Microelectronics Tsinghua University
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Xie Dan
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
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Xie Dan
Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China
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Zhang Xhigang
Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China
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Zhang Zhigang
Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China
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Liu Litian
Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China
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