Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol-Gel Method : Surfaces, Interfaces, and Films

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概要

• 論文の詳細を見る

• The ferroelectric Pb(Zr, Ti)O_3 (PZT) thin films have been directly synthesized on silicon substrates by sol-gel method. X-ray diffraction (XRD) analysis reveals that besides the rhombohedral structure, the random oriented tetragonal perovskite PZT is formed with the lattice parameters of a = 3.97A and c = 4.10A. Energy dispersive X-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS) results indicate that the chemical composition of the PZT thin film is stoichiometric just as designed. High resolution electron microscopy (HREM) results show that amorphous SiO_x (x = 1-2) layer and nanometer lead grains are formed at the interface between the silicon substrate and PZT thin film.

• 社団法人応用物理学会の論文
• 2001-08-15

著者

• Zhu Jing

  Electron Microscopy Laboratory School Of Materials Science And Engineering Tsinghua University

• Li Zhijian

  Institute Of Microelectronics Tsinghua University

• Zhu J

  Electron Microscopy Laboratory School Of Materials Science And Engineering Tsinghua University

• ZHANG Qi

  Electron Microscopy Laboratory, School of Materials Science and Engineering, Tsinghua University

• REN Tianling

  Institute of Microelectronics, Tsinghua University

• ZHANG Lintao

  Institute of Microelectronics, Tsinghua University

• Ren Tianling

  Institute Of Microelectronics Tsinghua University

• Zhang Lintao

  Institute Of Microelectronics Tsinghua University

• Zhang Qi

  Electron Microscopy Laboratory School Of Materials Science And Engineering Tsinghua University

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