Physical Properties of 0.24Pb(Zn1/3Nb2/3)O3$\cdot$0.384PbZrO3$\cdot$0.376PbTiO3 Thin Films Crystallized by Hot Isostatic Pressing

概要

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Amorphous thin films with a composition of 0.24Pb(Zn1/3Nb2/3)O3$\cdot$0.384PbZrO3$\cdot$0.376PbTiO3 (PZNZT) were deposited on PbTiO3 (PT)/Pt(111)/SiO2/Si(100) substrates by room-temperature sputtering. The chemical-oxidation-treated films after deposition were crystallized by varying the pressure in a wide range by hot isostatic pressing (HIP) at a fixed temperature 200°C lower than that adopted in rapid thermal annealing (RTA). All the obtained films were confirmed to be of the single-phase perovskite structure. Particularly, the films HIP-treated at 500°C for 1 h under a mixed gas (Ar/O2 = 80/20) pressure of 1.8 MPa showed almost complete (001) orientation and their degree of $c$-axis orientation, $\alpha$, reached up to 0.95. The crystallinity in the films HIP-treated under a high pressure ranging from 8.8 to 176.5 MPa significantly lowered due to an increase in the formation of an amorphous part with increasing pressure. The PZNZT films HIP-treated at 500°C for 1 h under the mixed gas pressure of 1.8 MPa had symmetric and slim hysteresis loop shapes with a remanent polarization $2P_{\text{r}}=23.2$ μC/cm2 and a coercive field $2E_{\text{c}}=86.7$ kV/cm.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-09-15