Fabrication and Characterization of Pb(Zr,Ti)O3 Microcantilever for Resonance Sensors

概要

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A microcantilever beam that includes the Pb(Zr,Ti)O3 (PZT) layer was fabricated. In this cantilever structure, RuO2 conductive oxide thin film was adopted to simplify the structure. Deposition parameters for PZT film were optimized and the etching conditions of Si were studied. From the hysteresis loop of PZT thin film, we found that the remanent polarization ($P_{\text{r}}$) of PZT thin film increased as the deposition temperature decreased and the post-annealing temperature increased. When the PZT thin films were deposited at 375°C by the radio frequency (RF) magnetron sputtering method and were annealed at 725°C by a rapid thermal annealing (RTA) process, the $P_{\text{r}}$ of PZT thin film reached the maximum value of 11 μC/cm2. The mode of Si etching changed from isotropic one to anisotropic one with the addition of O2 gas in SF6 gas. Using these optimized conditions, 50 μm wide microcantilevers with different lengths from 50 μm to 150 μm were fabricated. It turned out that the measured resonance frequency ranged from 41.6 kHz to 180 kHz and the resonance frequency decreased as the length of cantilever increased.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-03-15