Cu-Field Aided Lateral Crystallization (FALC) of Amorphous Silicon Films below 450℃
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概要
- 論文の詳細を見る
By adopting a novel concept of Cu-field aided lateral crystallization (FALC) process, possibility of the low temperature crystallization of amorphous silicon films was investigated. When an electric field was applied to the selectively Cu-deposited (a-Si) film during the thermal annealing below 450℃, the lateral crystallization proceeded toward Cu-free region from negative electrode side to positive electrode side. Microstructures of the crystallized area were investigated and we confirmed that 800Å thick a-Si film was completely crystallized by Cu-FALC process below 450℃. Furthermore, we could successfully crystallize the a-Si at the temperature as low as 350℃ with an extremely fast crystallization velocity of 12 μm/h by Cu-FALC process.
- 社団法人電子情報通信学会の論文
- 2002-06-24
著者
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CHOI Duck-Kyun
Department of Inorganic Materials Engineering, CPRC (Ceramic Processing Research Center), Hanyang Un
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Choi Duck-kyun
Department Of Ceramic Engineering Hanyang University
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Park Kyoung-wan
Department Of Ceramic Engineering Hanyang University
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Choi D‐k
Department Of Ceramic Engineering Hanyang University
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You Jeong-Eun
Department of Ceramic Engineering, Hanyang University
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You Jeong-eun
Department Of Ceramic Engineering Hanyang University
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Choi Duck-kyun
Department Ceramic Engineering, Hanyang University, Seoul 133-791, Korea
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