Optical Damage Resistance of Near-Stoichiometric LiNbO3 Crystal Doped with Sc

概要

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Near-stoichiometric LiNbO3 (SLN) crystals doped with Sc (Sc:SLN) were grown from Li-rich solutions through a top-seeded solution growth (TSSG) method using resistance heating equipment. The optical damage resistance of the Sc:SLN crystals was investigated at a wavelength of 532 nm. The Sc:SLN crystals doped with more than 0.4 mol% Sc doping concentration showed no optical damage. The OH absorption peak for the Sc:SLN crystals shifted from 2.88 μm to 2.85 μm at 0.4 mol% Sc. This critical Sc doping concentration in the SLN crystal was one-fifth that in a congruent melt composition LN (CLN) crystal which required at least 2 mol% Sc (1 mol% Sc2O3) to suppress optical damage. The 0.4 mol% Sc doping required to suppress optical damage in the SLN crystal was also low compared to the 1 mol% Mg doping required for the same purpose. Hence, the Sc:SLN crystal is a more promising material with respect to resisting optical damage when applied to, for example, electrooptic devices.
Japan Society of Applied Physicsの論文
2004-07-15