Investigation of Increased Photorefractive Damage Resistance in LiNbO_3 by Two-Wave Mixing Measurements
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概要
- 論文の詳細を見る
The increase in photorefractive damage resistance in both MgO-doped and nondoped Li-deficient LiNbO_3 is studied by two wave mixing measurements. Holographic diffraction measurements demonstrated that crystals with high optical damage resistance increase photoconductivity and response time for erasing photorefractive grating. The erasure speed is linearly proportional to the MgO dopant and Li-site vacancy concentrations. The erasure time of holographic grating shows an Arrhenius dependence on temperature from which activation energy is obtained, We proposed an energy level model of the light-induced transport for LiNbO_3 : MgO dopants introduce donor levels 0.11 eV below the conduction band, whereas, Li-site vacancies in nondoped crystal introduce acceptor levels 0.29 -0.44eV above the valence band.
- 社団法人応用物理学会の論文
- 1996-05-15
著者
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IYI Nobuo
National Institute for Materials Science, Advanced Materials Laboratory
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KITAMURA Kenji
National Institute for Materials Science
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Iyi N
National Inst. Materials Sci. Ibaraki Jpn
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Iyi N
National Inst. For Materials Sci. (nims) Tsukuba
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Iyi Nobuo
Advanced Materials Laboratory National Institute For Materials Science (nims)
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Iyi Nobuo
National Institute For Research In Inorganic Materials
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Iyi Nobuo
Nirim
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Iyi Nobuo
Advanced Materials Laboratory (aml) National Institute For Materials Science (nims)
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Iyi Nobuo
Exploratory Nanomaterials Laboratory National Institute For Materials Science (nims)
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Iyi Nobuo
International Center For Materials Nanoarchitectonics (mana) National Institute For Materials Scienc
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Iyi Nobuo
National Institute For Materials Science
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Iyi Nobuo
National Institute For Reserch In Inorganic Materials
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KITAMURA Kenji
The National Institute for Researches in Inorganic Materials
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Fejer Martin.
Applied Physics Department Stanford University
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Iyi N
Advanced Materials Laboratory National Institute For Materials Science (nims)
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Kitamura Kenji
Advanced Materials Laboratory National Institute For Materials Science
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FURUKAWA Yasunori
HMRL, Hitachi Metals, Ltd.
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SATO Masayoshi
HMRL, Hitachi Metals, Ltd.
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MASHIW Matthew.
Electrical Engineering Department, Stanford University
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Iyi Nobuo
National Institute For Materials Science (nims)
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Iyi Nobuo
National Inst. For Materials And Sci. (nims)
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Mashiw Matthew.
Electrical Engineering Department Stanford University
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Furukawa Yasunori
Hmrl Hitachi Metals Ltd.:(present Address) Nirim
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Kitamura Kenji
Advanced Materials Laboratory National Institute For Materials Science (nims)
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Iyi Nobuo
National Institute For Materials And Science (nims)
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Sato Masayoshi
Hmrl Hitachi Metals Ltd.
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Kitamura Kenji
National Institute For Research In Inorganic Materials
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Bashaw Matthew
Electrical Engineering Department Stanford University
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