Conductive-Mode Atomic Force Microscopy Study of Amorphous Silicon Nitride Thin Films
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概要
- 論文の詳細を見る
We have used conductive-mode atomic force microscopy to study the electrical properties of amorphous silicon nitride thin films (a-SiN) in order to reveal their electrical properties on the nanometer scale. The current-voltage characteristics were fitted by the Pool-Frenkel equation, and the physical quantities showed good agreement with previous reports of a-SiN. The density of trapping centers obtained using this equation had a good agreement with the reported density of dangling bonds of silicon in a-SiN, then the conductance was attributed to electron hopping by the dangling bonds. The conductive areas observed in the current image obtained using this method did not depend on the topography. We considered that the current image represented the two-dimensional distribution of the components in the a-SiN films.
- Japan Society of Applied Physicsの論文
- 2003-11-01
著者
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YAMASAKI Satoshi
National Institute for Advanced Interdisciplinary Research
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Ando Atsushi
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Aya Yoichiro
Materials And Devices Development Center Bu Sanyo Electric Co. Ltd.
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Wakisaka Kenichiro
Materials And Devices Development Center Bu Sanyo Electric Co. Ltd.
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Wakisaka Kenichiro
Materials and Devices Development Center BU, Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573-8534, Japan
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Ando Atsushi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Aya Yoichiro
Materials and Devices Development Center BU, Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573-8534, Japan
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