Electrical Properties of Polycrystalline Si_<1-x> Ge_x Thin-Films Prepared by a Solid-Phase Crystallization Method
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2003-11-01
著者
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Nishio Koji
Materials And Devices Development Center Bu Sanyo Electric Co. Ltd.
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Aya Yoichiro
Materials And Devices Development Center Bu Sanyo Electric Co. Ltd.
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WAKISAKA Kenichiro
Materials and Devices Development Center BU, Sanyo Electric Co., Ltd.
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TAKEDA Katsutoshi
Materials and Devices Development Center BU, Sanyo Electric Co., Ltd.
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Takeda Katsutoshi
Materials And Devices Development Center Bu Sanyo Electric Co. Ltd.
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Wakisaka Kenichiro
Materials And Devices Development Center Bu Sanyo Electric Co. Ltd.
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- Topography and Local Electrical Properties of Nondoped Polycrystalline Silicon Thin Films Evaluated Using Conductive-Mode Atomic Force Microscopy
- Electrical Properties of Polycrystalline Si_ Ge_x Thin-Films Prepared by a Solid-Phase Crystallization Method
- Topography and Local Electrical Properties of Nondoped Polycrystalline Silicon Thin Films Evaluated Using Conductive-Mode Atomic Force Microscopy
- Conductive-Mode Atomic Force Microscopy Study of Amorphous Silicon Nitride Thin Films